Title :
Capacitive frequency tuning of ALN micromechanical resonators
Author :
Kim, B. ; Olsson, R.H., III ; Wojciechowski, K.E.
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM, USA
Abstract :
Frequency tuning of aluminum nitride (AlN) micromechanical resonators has been demonstrated by reactance manipulation via termination with variable capacitors. Shunting one electrode with a variable capacitor in a 13 MHz fourth overtone length-extensional mode resonator effected resonator stiffening to yield a ~600 ppm frequency shift. Tunability could be further increased by dedicating two electrodes for tuning doubling the frequency tuning range to ~1500 ppm. A tunable bandwidth balun filter has been constructed by parallel coupling of independently tunable resonators demonstrating almost three-fold increase in the bandwidth from 12 kHz to 33 kHz. Also a voltage-controlled frequency tuning printed circuit board (PCB) was implemented.
Keywords :
III-V semiconductors; aluminium compounds; capacitors; circuit tuning; electrodes; filters; micromechanical resonators; printed circuits; wide band gap semiconductors; AlN; aluminum nitride micromechanical resonators; bandwidth 12 kHz to 33 kHz; capacitive frequency tuning; electrode; fourth overtone length-extensional mode resonators; frequency 13 MHz; reactance manipulation; tunable bandwidth balun filter; tunable resonators; variable capacitors; voltage-controlled frequency tuning printed circuit board; Capacitance; Capacitors; Electrodes; Equations; Frequency measurement; Resonant frequency; Tuning; RF MEMS; aluminum nitride; resonator; tuning;
Conference_Titel :
Solid-State Sensors, Actuators and Microsystems Conference (TRANSDUCERS), 2011 16th International
Conference_Location :
Beijing
Print_ISBN :
978-1-4577-0157-3
DOI :
10.1109/TRANSDUCERS.2011.5969665
