High reliability high voltage HBTs operating up to 30 V

Author

Henderson, Tim ; Hitt, John ; Campman, Ken

Author_Institution

TriQuint Semicond. Texas, Richardson, TX, USA

fYear

2004

fDate

24-27 Oct. 2004

Firstpage

67

Lastpage

70

Abstract

This paper reports the reliability characterization of InGaP/GaAs HBTs fabricated with a high voltage process. Breakdown voltages BV_ceo = 42 V and BV_cbo = 72 V are demonstrated, making this technology suitable for 28 V bias in most applications. Proprietary growth, unit cell design, and fabrication techniques ensure that current collapse is not seen at any bias point up to avalanche breakdown. Elevated temperature and current density bias stress tests at 16 V, 20 V, and 30 V show good reliability, with an extrapolated MTTF at nominal bias conditions and 140°C junction temperature of at least 10⁷ hours.

Keywords

III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; high-voltage techniques; indium compounds; semiconductor device reliability; 140 C; 16 V; 20 V; 28 V; 30 V; 42 V; 72 V; GaAs; InGaP; InGaP-GaAs HBT; breakdown voltage; current collapse; current density bias stress test; elevated temperature test; extrapolated MTTF; high reliability HBT; high voltage HBT; high voltage process; unit cell design; Electric breakdown; Gallium arsenide; Heterojunction bipolar transistors; Low voltage; Materials reliability; Semiconductor device reliability; Semiconductor materials; Stress; Temperature; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Integrated Circuit Symposium, 2004. IEEE

ISSN

1550-8781

Print_ISBN

0-7803-8616-7

Type

conf

DOI

10.1109/CSICS.2004.1392492

Filename

1392492