High reliability high voltage HBTs operating up to 30 V

This paper reports the reliability characterization of InGaP/GaAs HBTs fabricated with a high voltage process. Breakdown voltages BV_ceo = 42 V and BV_cbo = 72 V are demonstrated, making this technology suitable for 28 V bias in most applications. Proprietary growth, unit cell design, and fabrication techniques ensure that current collapse is not seen at any bias point up to avalanche breakdown. Elevated temperature and current density bias stress tests at 16 V, 20 V, and 30 V show good reliability, with an extrapolated MTTF at nominal bias conditions and 140°C junction temperature of at least 10⁷ hours.