Title :
1.3 µm InAs/GaAs high-density quantum dot lasers
Author :
Tanaka, Yu ; Ishida, Mitsuru ; Takada, Kan ; Maeda, Yasunari ; Akiyama, Tomoyuki ; Yamamoto, Tsuyoshi ; Song, Hai-Zhi ; Yamaguchi, Masaomi ; Nakata, Yoshiaki ; Nishi, Kenichi ; Sugawara, Mitsuru ; Arakawa, Yasuhiko
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
Abstract :
We report on newly developed high-density quantum-dot lasers that provide extremely temperature-insensitive 10.3 Gb/s operation and higher-speed operation up to 20 Gb/s which is the first demonstration in 1.3 mum quantum-dot lasers.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; optical modulation; quantum dot lasers; semiconductor quantum dots; Fabry-Perot laser; InAs-GaAs; high-density quantum dot laser; higher-speed direct modulation; temperature-insensitive laser operation; wavelength 1.3 mum; Atomic force microscopy; Bandwidth; Coatings; Current density; Gallium arsenide; Laser theory; Quantum dot lasers; Temperature distribution; Threshold current; Waveguide lasers;
Conference_Titel :
LEOS Annual Meeting Conference Proceedings, 2009. LEOS '09. IEEE
Conference_Location :
Belek-Antalya
Print_ISBN :
978-1-4244-3680-4
Electronic_ISBN :
1092-8081
DOI :
10.1109/LEOS.2009.5343392
