Title :
A 94-GHz passive imaging receiver using a balanced LNA with embedded Dicke switch
Author :
Gilreath, Leland ; Jain, Vipul ; Yao, Hsin-Cheng ; Zheng, Le ; Heydari, Payam
Author_Institution :
Univ. of California, Irvine, CA, USA
Abstract :
A fully-integrated silicon-based 94-GHz direct-detection imaging receiver with on-chip Dicke switch and baseband circuitry is demonstrated. Fabricated in a 0.18-μm SiGe BiCMOS technology (fT/fMAX = 200 GHz), the receiver chip achieves a peak imager responsivity of 43 MV/W with a 3-dB bandwidth of 26 GHz. A balanced LNA topology with an embedded Dicke switch provides 30-dB gain and enables a temperature resolution of 0.3-0.4 K. The imager chip consumes 200 mW from a 1.8-V supply.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; low noise amplifiers; BiCMOS technology; balanced LNA topology; bandwidth 26 GHz; baseband circuitry; direct-detection imaging receiver; embedded Dicke switch; frequency 94 GHz; gain 30 dB; low noise amplifier; on-chip Dicke switch; passive imaging receiver; peak imager responsivity; power 200 mW; receiver chip; size 0.18 mum; temperature 0.3 K to 0.4 K; voltage 1.8 V; Bandwidth; Baseband; BiCMOS integrated circuits; Circuit topology; Germanium silicon alloys; Image resolution; Silicon germanium; Switches; Switching circuits; Temperature; BiCMOS; SiGe; W-band; low-noise amplifiers; millimeter-wave; passive imaging; power detectors;
Conference_Titel :
Radio Frequency Integrated Circuits Symposium (RFIC), 2010 IEEE
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4244-6240-7
DOI :
10.1109/RFIC.2010.5477289
