Defect analysis of degraded InGaP/GaAs HBTs

Author

Pazirandeh, R. ; Zeimer, U. ; Kirmse, H. ; Würfl, J. ; Tränkle, G. ; Österle, W.

Author_Institution

Ferdinand-Braun-Inst. fur Hochstfrequenztechnik, Berlin, Germany

fYear

2004

fDate

24-27 Oct. 2004

Firstpage

71

Lastpage

74

Abstract

The reliability of InGaP/GaAs HBTs has been investigated widely. In order to understand the degradation mechanism, degraded HBTs were analysed in TEM and the diffusion behaviour of elements was investigated with EDXS. Dislocations were observed having their origin in the base emitter junction. Similarities with dislocations in degraded LEDs and LDs were observed. Indium diffusion out of the emitter can be detected, whereas dislocations in the emitter seem to block the out diffusion of indium. No carbon precipitations were found in the base-emitter junction area of the degraded HBTs.

Keywords

III-V semiconductors; diffusion; gallium arsenide; heterojunction bipolar transistors; indium compounds; light emitting diodes; semiconductor device reliability; semiconductor lasers; transmission electron microscopy; HBT reliability; InGaP-GaAs; base emitter junction; defect analysis; degraded InGaP-GaAs HBT; degraded LEDs; degraded laser diodes; diffusion behaviour; indium diffusion; Carbon dioxide; Chemical elements; Degradation; Gallium arsenide; Heterojunction bipolar transistors; Hydrogen; Indium; Light emitting diodes; Materials reliability; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Integrated Circuit Symposium, 2004. IEEE

ISSN

1550-8781

Print_ISBN

0-7803-8616-7

Type

conf

DOI

10.1109/CSICS.2004.1392493

Filename

1392493