Microwave characteristics of Ge n-i-p waveguide photodetectors on silicon-on-insulator substrate

Author

Ramaswamy, Anand ; Nunoya, Nobuhiro ; Yin, Tao ; Johansson, Leif A. ; Bowers, John E.

Author_Institution

ECE Dept., Univ. of California Santa Barbara, Santa Barbara, CA, USA

fYear

2009

fDate

4-8 Oct. 2009

Firstpage

660

Lastpage

661

Abstract

We present microwave characteristics of evanescently coupled Ge waveguide photodetectors grown on Si rib waveguides. At 1 GHz and 40 mA of photocurrent, an OIP3 of 36.49 dBm is measured. Additionally, the maximum RF power extracted at 1 GHz is 14.35 dBm at 60 mA of photocurrent and 8 V reverse bias.

Keywords

elemental semiconductors; germanium; integrated optics; microwave detectors; optical waveguides; photodetectors; rib waveguides; silicon; silicon-on-insulator; OIP3; RF power; Si; Si-Ge; current 40 mA; current 60 mA; evanescently coupled waveguide photodetector; frequency 1 GHz; microwave characteristics; n-i-p waveguide photodetector; photocurrent; rib waveguides; silicon-on-insulator substrate; third order output intercept points; voltage 8 V; Bandwidth; Electromagnetic heating; Linearity; Optical waveguides; Photoconductivity; Photodetectors; Radio frequency; Silicon on insulator technology; Space charge; Thermal conductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

LEOS Annual Meeting Conference Proceedings, 2009. LEOS '09. IEEE

Conference_Location

Belek-Antalya

ISSN

1092-8081

Print_ISBN

978-1-4244-3680-4

Electronic_ISBN

1092-8081

Type

conf

DOI

10.1109/LEOS.2009.5343396

Filename

5343396