State of the art thermal analysis of GaAs/InGaP HBT

Author

van der Wel, P.J. ; Bielen, J.A. ; Henderson, T. ; Middleton, I.

Author_Institution

Innovation Centre RF, Philips Semicond., Nijmegen, Netherlands

fYear

2004

fDate

24-27 Oct. 2004

Firstpage

79

Lastpage

82

Abstract

Increasing junction temperatures and reliability requirements demand an accurate thermal analysis of RF power amplifiers in hand-sets. An incorrect estimate of junction temperatures will lead to either a too optimistic or a too conservative reliability assessment, neither of which is desired. We describe thorough thermal analysis of Triquint´s InGaP HBT processes. By comparing several experimental techniques and finite element simulations, an accurate determination of junction temperature is obtained. The accurate junction temperature results in an accurate assessment of reliability, which enables the HBT technology to be utilized to its full extent.

Keywords

III-V semiconductors; finite element analysis; gallium arsenide; heterojunction bipolar transistors; indium compounds; infrared imaging; power amplifiers; semiconductor device reliability; temperature measurement; thermal analysis; thermal conductivity; GaAs-InGaP; Marsh method; RF power amplifiers; beta degradation; finite element simulation; heterojunction bipolar transistors; infrared thermography; junction temperature estimation; thermal conductivity; Doping; Gallium arsenide; Heterojunction bipolar transistors; Life estimation; Lifetime estimation; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Temperature dependence; Thermal conductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Integrated Circuit Symposium, 2004. IEEE

ISSN

1550-8781

Print_ISBN

0-7803-8616-7

Type

conf

DOI

10.1109/CSICS.2004.1392495

Filename

1392495