The impact of MOSFET layout dependent stress on high frequency characteristics and flicker noise

Author

Yeh, Kuo-Liang ; Ku, Chih-You ; Guo, Jyh-Chyurn

Author_Institution

Inst. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

fYear

2010

fDate

23-25 May 2010

Firstpage

577

Lastpage

580

Abstract

Layout dependent stress in 90 nm MOSFET and its impact on high frequency performance and flicker noise has been investigated. Donut MOSFETs were created to eliminate the transverse stress from shallow trench isolation (STI). Both NMOS and PMOS can benefit from the donut layout in terms of higher effective mobility μ_eff and cutoff frequency f_T, as well as lower flicker noise. The measured flicker noise follows number fluctuation model for NMOS and mobility fluctuation model for PMOS, respectively. The reduction of flicker noise suggests the reduction of STI generated traps and the suppression of mobility fluctuation due to eliminated transverse stress using donut structure.

Keywords

MOSFET; circuit layout; flicker noise; semiconductor device noise; MOSFET layout dependent stress; NMOS; PMOS; cutoff frequency; donut layout structure; effective mobility; flicker noise; high frequency characteristics; mobility fluctuation model; number fluctuation model; shallow trench isolation; size 90 nm; transverse stress; 1f noise; Compressive stress; Electrical resistance measurement; Fluctuations; Frequency measurement; Low-frequency noise; MOS devices; MOSFET circuits; Noise measurement; Tensile stress; Donut; Flicker noise; Mobility; Shallow-Trench Isolation (STI); Stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits Symposium (RFIC), 2010 IEEE

Conference_Location

Anaheim, CA

ISSN

1529-2517

Print_ISBN

978-1-4244-6240-7

Type

conf

DOI

10.1109/RFIC.2010.5477296

Filename

5477296