DocumentCode :
2537803
Title :
The impact of MOSFET layout dependent stress on high frequency characteristics and flicker noise
Author :
Yeh, Kuo-Liang ; Ku, Chih-You ; Guo, Jyh-Chyurn
Author_Institution :
Inst. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fYear :
2010
fDate :
23-25 May 2010
Firstpage :
577
Lastpage :
580
Abstract :
Layout dependent stress in 90 nm MOSFET and its impact on high frequency performance and flicker noise has been investigated. Donut MOSFETs were created to eliminate the transverse stress from shallow trench isolation (STI). Both NMOS and PMOS can benefit from the donut layout in terms of higher effective mobility μeff and cutoff frequency fT, as well as lower flicker noise. The measured flicker noise follows number fluctuation model for NMOS and mobility fluctuation model for PMOS, respectively. The reduction of flicker noise suggests the reduction of STI generated traps and the suppression of mobility fluctuation due to eliminated transverse stress using donut structure.
Keywords :
MOSFET; circuit layout; flicker noise; semiconductor device noise; MOSFET layout dependent stress; NMOS; PMOS; cutoff frequency; donut layout structure; effective mobility; flicker noise; high frequency characteristics; mobility fluctuation model; number fluctuation model; shallow trench isolation; size 90 nm; transverse stress; 1f noise; Compressive stress; Electrical resistance measurement; Fluctuations; Frequency measurement; Low-frequency noise; MOS devices; MOSFET circuits; Noise measurement; Tensile stress; Donut; Flicker noise; Mobility; Shallow-Trench Isolation (STI); Stress;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radio Frequency Integrated Circuits Symposium (RFIC), 2010 IEEE
Conference_Location :
Anaheim, CA
ISSN :
1529-2517
Print_ISBN :
978-1-4244-6240-7
Type :
conf
DOI :
10.1109/RFIC.2010.5477296
Filename :
5477296
Link To Document :
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