A 22.5-dB gain, 20.1-dBm output power K-band power amplifier in 0.18-µm CMOS

Author

Hung, Chi-Cheng ; Kuo, Jing-Lin ; Lin, Kun-You ; Wang, Huei

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan

fYear

2010

fDate

23-25 May 2010

Firstpage

557

Lastpage

560

Abstract

A fully integrated power amplifier (PA) at K-band implemented in 0.18-μm CMOS process is presented. With appropriate prematch of power cells and high gain driver stage network design, the power amplifier performs 22.5 dB peak gain and saturation output power of 20.1 dBm. The 3-dB gain bandwidth is from 18-23 GHz, while the output power at 1-dB compression point (OP_1dB) from 19-22 GHz is over 15 dBm. To the authors´ best knowledge, this is the power amplifier with the highest gain and with good output power in K-band using standard CMOS process.

Keywords

CMOS integrated circuits; millimetre wave power amplifiers; CMOS process; K-band power amplifier; bandwidth 18 GHz to 23 GHz; fully integrated power amplifier; gain 22.5 dB; gain 3 dB; high gain driver stage network design; power cells; size 0.18 mum; CMOS process; Driver circuits; Frequency; High power amplifiers; K-band; Performance gain; Power amplifiers; Power generation; Radiofrequency amplifiers; Resistors; CMOS; K-band; power amplifier (PA); power combining;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits Symposium (RFIC), 2010 IEEE

Conference_Location

Anaheim, CA

ISSN

1529-2517

Print_ISBN

978-1-4244-6240-7

Type

conf

DOI

10.1109/RFIC.2010.5477297

Filename

5477297