Title :
A tunable laser using double-ring resonator external cavity via free-carrier dispersion effect
Author :
Ren, M. ; Cai, H. ; Tsai, J.M. ; Zhu, W.M. ; Kwong, D.L. ; Liu, A.Q.
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
Abstract :
A tunable laser based on double-ring external resonant cavity is designed, fabricated and tested. The double-ring resonator external cavity consists of a silicon waveguide ring resonator, a p-i-n doped silicon ring resonator, and a superluminescent diode (SLED). The laser is fabricated on a SOI wafer and the wavelength is tuned by injecting electrical currents to p-i-n structures. In the experiment, it measures 45.8 nm wavelength tuning with 110 GHz channel spacing and the average output power is approximately -8 dBm. It advances in high tuning speed, large side mode suppression ratio, and low manufacture cost, such has potential applications in high speed WDM networks.
Keywords :
channel spacing; elemental semiconductors; laser cavity resonators; ring lasers; silicon; silicon-on-insulator; wavelength division multiplexing; SLED; SOI wafer; Si; channel spacing; double-ring resonator external cavity; free-carrier dispersion effect; frequency 110 GHz; high speed WDM network; high tuning speed; p-i-n doped ring resonator; side mode suppression ratio; superluminescent diode; tunable laser; waveguide ring resonator; wavelength 45.8 nm; wavelength tuning; Cavity resonators; Laser tuning; Ring lasers; Silicon; Waveguide lasers; MEMS; Tunable laser; double-ring resonator; external cavity;
Conference_Titel :
Solid-State Sensors, Actuators and Microsystems Conference (TRANSDUCERS), 2011 16th International
Conference_Location :
Beijing
Print_ISBN :
978-1-4577-0157-3
DOI :
10.1109/TRANSDUCERS.2011.5969684