Title :
A fast low-power 4×4 switch IC using InP HEMTs for 10-Gbit/s systems
Author :
Kamitsuna, Hideki ; Yamane, Yasuro ; Tokumitsu, M. ; Sugahara, Hirohiko ; Muraguchi, Masahiro
Author_Institution :
NTT Photonics Labs., NTT Corp., Atsugi, Japan
Abstract :
A 4×4 switch IC using cold-FETs connected in series can be used as a single-ended 4×4 switch, an add drop multiplexer, or a differential 2×2 switch. An InP HEMT with a low Ron·Coff product enables us to configure a dc-to-over-10-GHz switch without using a shunt FET, which offers a logic-level-independent interface. A packaged IC achieves error-free operation up to 12.5 Gbit/s with either negative (VH = 0 V, VL = -0.9 V) or positive (VH = +13 V, VL = +0.7 V) logic-level input for all 16 possible states. The power consumption is less than 5 mW. The add drop multiplexing operation with an ultra-fast switching of ∼160 ps is also successfully demonstrated.
Keywords :
III-V semiconductors; field effect transistor switches; high electron mobility transistors; indium compounds; low-power electronics; microwave switches; multiplexing equipment; switching circuits; 0.7 V; 13 V; InP; InP HEMT; RF switches; add drop multiplexer; add drop multiplexing operation; cold FETs; differential 2×2 switch; error-free operation; fast low-power 4×4 switch IC; logic-level independence; logic-level-independent interface; low Ron·Coff product; packaged IC; series-FET configuration; single-ended 4×4 switch; ultra-fast switching; Add-drop multiplexers; Bandwidth; Baseband; FETs; HEMTs; Indium phosphide; Insertion loss; Integrated circuit packaging; MODFETs; Switches;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium, 2004. IEEE
Print_ISBN :
0-7803-8616-7
DOI :
10.1109/CSICS.2004.1392501
