A 325 GHz frequency multiplier chain in a SiGe HBT technology

Author

Öjefors, Erik ; Heinemann, Bernd ; Pfeiffer, Ullrich R.

Author_Institution

Univ. of Wuppertal, Wuppertal, Germany

fYear

2010

fDate

23-25 May 2010

Firstpage

91

Lastpage

94

Abstract

A single-chip 325-GHz ×18 frequency multiplier chain based on two cascaded active differential triplers and a balanced output doubler is presented. The multiplier operates over a 317 to 328 GHz bandwidth with a 0-dBm 18-GHz input signal. A peak output power of -8 dBm is obtained at 325 GHz. The multiplier chain is realized in an evaluation SiGe HBT technology with cut-off frequencies f_T/f_max of 250 GHz / 380 GHz.

Keywords

MMIC frequency convertors; frequency multipliers; heterojunction bipolar transistors; silicon compounds; HBT technology; balanced output doubler; bandwidth 317 GHz to 328 GHz; cascaded active differential triplers; frequency 325 GHz; frequency multiplier chain; CMOS technology; Circuits; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Power amplifiers; Power generation; Signal generators; Silicon germanium; Submillimeter wave technology; Frequency conversion; heterojunction bipolar transistors; millimeter wave integrated circuits; power amplifiers; silicon; submillimeter wave generation;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits Symposium (RFIC), 2010 IEEE

Conference_Location

Anaheim, CA

ISSN

1529-2517

Print_ISBN

978-1-4244-6240-7

Type

conf

DOI

10.1109/RFIC.2010.5477301

Filename

5477301