A state-converting inline RF MEMS power sensor using GaAs MMIC technology

To improve microwave characteristics and the frequency response, and achieve the state conversion, an inline RF MEMS power sensor with an impedance matching structure and a capacitance compensating structure, and two shunt capacitive MEMS switch structures is presented in this paper. This power sensor is accomplished with GaAs MMIC technology. In detection state, experiments demonstrate that the improved power sensor has reflection losses and insertion losses of less than -17 dB and 0.8 dB, and the flatness of X-band frequency response. In non-detection state, the sensor has reflection losses and insertion losses of less than -19 dB and 0.6 dB.