E-/D-pHEMT technology for wireless components

A pseudomorphic high-electron mobility transistor (pHEMT) technology for highly integrated wireless components is presented. The technology utilizes 0.5-μm gate length, double recess enhancement- and depletion-mode GaAs/AlGaAs/InGaAs transistors. The nominal E-mode pinch-off voltage is +350 mV with IMAX and IDSS of 290 and 0.0005 mA/mm, respectively, transconductance of 550 mS/mm, on-resistance of 2.5 ohm·mm, F_t of 30 GHz, F_max > 100 GHz and drain-gate breakdown voltage in excess of 15 V. The nominal D-mode pinch-off is -800 mV with IMAX and IDSS of 500 and 200 mA/mm, respectively, transconductance of 350 mS/mm, on-resistance of 1.5 ohm·mm, off-capacitance of 0.3 pF/mm, F_t of 25 GHz, F_max of 90 GHz and drain-gate breakdown voltage in excess of 17 V. This technology enables the integration of ultra-linear high-power amplifiers that are highly efficient, low-noise amplifiers, high-power and very linear antenna switches, baluns and filters, and digital logic functions as well as power control devices.