A 50ppm 600MHz frequency reference utilizing the series resonance of an FBAR

Author

Hu, Julie ; Callaghan, Lori ; Ruby, Richard ; Otis, Brian

Author_Institution

Dept. of Electr. Eng., Univ. of Washington, Seattle, WA, USA

fYear

2010

fDate

23-25 May 2010

Firstpage

325

Lastpage

328

Abstract

A 600MHz thin film bulk-acoustic wave resonator (FBAR)-based differential oscillator fabricated in a 0.13μm CMOS process is presented. The oscillator employs a crosscoupled pair with an FBAR resonator tank providing high Q source degeneration to realize frequency oscillation at the series resonance. The measured phase noise is -126 and -150dBc/Hz at 10kHz and 1MHz frequency offsets respectively; the integrated RMS jitter from 10kHz to 20MHz is 50fs. The oscillator achieves a frequency drift of 50ppm over the temperature range from 25 to 110 °C, providing the potential for quartz replacement in some applications. The figure-of-merit (FOM) of the oscillator is 214dB.

Keywords

acoustic resonators; bulk acoustic wave devices; jitter; oscillators; thin film circuits; CMOS process; FBAR resonator tank; Q source degeneration; RMS jitter; differential oscillator; figure-of-merit; frequency 10 kHz to 20 MHz; frequency 600 MHz; frequency offsets; frequency oscillation; frequency reference; gain 214 dB; quartz replacement; series resonance; thin film bulk-acoustic wave resonator; CMOS process; Film bulk acoustic resonators; Frequency measurement; Jitter; Noise measurement; Oscillators; Phase measurement; Phase noise; Resonance; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits Symposium (RFIC), 2010 IEEE

Conference_Location

Anaheim, CA

ISSN

1529-2517

Print_ISBN

978-1-4244-6240-7

Type

conf

DOI

10.1109/RFIC.2010.5477309

Filename

5477309