Title :
A 50ppm 600MHz frequency reference utilizing the series resonance of an FBAR
Author :
Hu, Julie ; Callaghan, Lori ; Ruby, Richard ; Otis, Brian
Author_Institution :
Dept. of Electr. Eng., Univ. of Washington, Seattle, WA, USA
Abstract :
A 600MHz thin film bulk-acoustic wave resonator (FBAR)-based differential oscillator fabricated in a 0.13μm CMOS process is presented. The oscillator employs a crosscoupled pair with an FBAR resonator tank providing high Q source degeneration to realize frequency oscillation at the series resonance. The measured phase noise is -126 and -150dBc/Hz at 10kHz and 1MHz frequency offsets respectively; the integrated RMS jitter from 10kHz to 20MHz is 50fs. The oscillator achieves a frequency drift of 50ppm over the temperature range from 25 to 110 °C, providing the potential for quartz replacement in some applications. The figure-of-merit (FOM) of the oscillator is 214dB.
Keywords :
acoustic resonators; bulk acoustic wave devices; jitter; oscillators; thin film circuits; CMOS process; FBAR resonator tank; Q source degeneration; RMS jitter; differential oscillator; figure-of-merit; frequency 10 kHz to 20 MHz; frequency 600 MHz; frequency offsets; frequency oscillation; frequency reference; gain 214 dB; quartz replacement; series resonance; thin film bulk-acoustic wave resonator; CMOS process; Film bulk acoustic resonators; Frequency measurement; Jitter; Noise measurement; Oscillators; Phase measurement; Phase noise; Resonance; Transistors;
Conference_Titel :
Radio Frequency Integrated Circuits Symposium (RFIC), 2010 IEEE
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4244-6240-7
DOI :
10.1109/RFIC.2010.5477309
