Title :
Different stiction mechanisms in electrostatic MEMS devices: Nanoscale characterization based on adhesion and friction measurements
Author :
Zaghloul, U. ; Bhushan, B. ; Pons, P. ; Papaioannou, G. ; Coccetti, F. ; Plana, R.
Author_Institution :
CNRS, LAAS, Toulouse, France
Abstract :
In this work, different stiction mechanisms in electrostatic micro-electromechanical systems (MEMS) and particularly in RF-MEMS switches were studied for the first time. In these devices stiction can be caused by two main mechanisms: dielectric charging and meniscus formation resulting from the adsorbed water film between the switch bridge and the dielectric layer. The effect of each mechanism and their interaction were investigated by measuring the adhesive and friction forces under different electrical stress conditions and relative humidity levels. An atomic force microscope (AFM) was used to perform force-distance and friction measurements on the nanoscale. The study provides an in-depth understanding of different stiction mechanisms, and explanation for the literature reported lifetime measurements for electrostatic capacitive MEMS switches.
Keywords :
adhesion; atomic force microscopy; distance measurement; electrostatic devices; force measurement; friction; microswitches; stiction; AFM; RF-MEMS switches; adhesion measurements; atomic force microscope; dielectric charging; dielectric layer; electrical stress condition; electrostatic MEMS devices; electrostatic capacitive MEMS switches; electrostatic microelectromechanical device; force-distance measurements; friction force measurements; literature reported lifetime measurements; meniscus formation; nanoscale characterization; relative humidity levels; stiction mechanisms; switch bridge; Dielectrics; Electrostatics; Films; Force; Force measurement; Friction; Humidity; Stiction; adhesive force; dielectric charging; electrostatic MEMS; field-induced meniscus; friction force;
Conference_Titel :
Solid-State Sensors, Actuators and Microsystems Conference (TRANSDUCERS), 2011 16th International
Conference_Location :
Beijing
Print_ISBN :
978-1-4577-0157-3
DOI :
10.1109/TRANSDUCERS.2011.5969697