Title :
Reliability consideration of GaAs pHEMT Schottky diodes for mixer applications
Author :
Chou, Y.C. ; Leung, D. ; Biedenbender, M. ; Fordham, O. ; Grundbacher, R. ; Kan, Q. ; Liu, P.H. ; Eng, D. ; Lai, R. ; Chin, P. ; Block, T. ; Oki, A.
Author_Institution :
Northrop Grumman Space Technol., Redondo Beach, CA, USA
Abstract :
Factors affecting reliability performance of GaAs PHEMT Schottky diodes for mixer applications were investigated: the total gate periphery, gate feed cross-sectional area, and the operating gate current. In addition, an elevated two-temperature lifetest at Tambient of 265°C and 280°C was performed to reveal the degradation mechanism of GaAs Schottky diodes. It was found that Ti diffusion into the AlGaAs layer is the primary degradation mechanism. The Schottky diode degradation exhibits an increase in reverse gate leakage current/series resistance, and a decrease in Schottky barrier height. The lifetest showed that no failure was induced by electro-migration on diodes operating up to 1.2×1010 Amps/cm2 (the maximum allowable current density for Au in MIL-M-38510 is 6×105 Amps/cm2). Accordingly, the reliability guideline of GaAs PHEMT Schottky diodes for mixer applications was established.
Keywords :
III-V semiconductors; Schottky diodes; aluminium compounds; electromigration; gallium arsenide; high electron mobility transistors; mixers (circuits); semiconductor device reliability; 265 C; 280 C; AlGaAs; GaAs; GaAs pHEMT Schottky diodes; Schottky barrier height; Schottky diode degradation; electro-migration; elevated two-temperature lifetest; gate feed cross-sectional area; mixer applications; operating gate current; reliability guideline; reverse gate leakage current; series resistance; total gate periphery; Current density; Degradation; Feeds; Gallium arsenide; Gold; Guidelines; Leakage current; PHEMTs; Schottky barriers; Schottky diodes;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium, 2004. IEEE
Print_ISBN :
0-7803-8616-7
DOI :
10.1109/CSICS.2004.1392509
