DocumentCode :
2538105
Title :
SiGe and Si PMOSFET´s characteristics with ZrO/sub 2/ gate dielectric
Author :
Ngai, T. ; Qi, W.J. ; Chen, X. ; Sharma, R. ; Fretwell, J.L. ; Lee, J.C. ; Banerjee, S.K.
Author_Institution :
Microelectron. Res. Center, Texas Univ., Austin, TX, USA
fYear :
2000
fDate :
19-21 June 2000
Firstpage :
21
Lastpage :
22
Abstract :
The realization of surface-channel SiGe PMOSFETs has been hindered by poor gate oxide quality. Although buried-channel SiGe PMOSFETs using thin Si cap layers can alleviate these problems, the reduction of effective gate capacitance is a drawback. There has been some success in the deposition of ultra-thin SiO/sub 2/ films directly on strained SiGe using remote plasma chemical vapor deposition (Sharma et al, 1999); however, high leakage currents due to direct tunneling in thin oxide films are still difficult to be overcome. In recent years, high dielectric constant (high-k) materials have gained significant attention as possible replacements for conventional Si oxide. In this study, Si and surface-channel SiGe PMOSFETs are successfully fabricated for the first time using ultra-thin ZrO/sub 2/ gate dielectric. The equivalent oxide thickness (EOT) of ZrO/sub 2/ films is 18.7 /spl Aring/ for SiGe PMOSFETs, and 17 /spl Aring/ for Si devices.
Keywords :
Ge-Si alloys; MOSFET; capacitance; dielectric thin films; elemental semiconductors; leakage currents; permittivity; semiconductor device measurement; semiconductor materials; silicon; tunnelling; zirconium compounds; 17 angstrom; 18.7 angstrom; PMOSFET characteristics; Si PMOSFETs; Si oxide replacement; SiGe PMOSFETs; ZrO/sub 2/ gate dielectric; ZrO/sub 2/-Si; ZrO/sub 2/-SiGe; buried-channel SiGe PMOSFETs; direct tunneling; effective gate capacitance; equivalent oxide thickness; gate oxide quality; high dielectric constant materials; high-k materials; leakage currents; remote plasma chemical vapor deposition; strained SiGe; surface-channel SiGe PMOSFETs; thin Si cap layers; thin oxide films; ultra-thin SiO/sub 2/ films; ultra-thin ZrO/sub 2/ gate dielectric; Capacitance; Chemical vapor deposition; Dielectric thin films; Germanium silicon alloys; High K dielectric materials; High-K gate dielectrics; MOSFET circuits; Plasma chemistry; Plasma materials processing; Silicon germanium;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference, 2000. Conference Digest. 58th DRC
Conference_Location :
Denver, CO, USA
Print_ISBN :
0-7803-6472-4
Type :
conf
DOI :
10.1109/DRC.2000.877071
Filename :
877071
Link To Document :
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