A low cost power amplifier for 5-GHz W-LAN applications (invited paper)

Author

Scuderi, A. ; Carrara, F. ; Palmisano, G.

Author_Institution

STMicroelectronics, Catania, Italy

fYear

2004

fDate

24-27 Oct. 2004

Firstpage

129

Lastpage

132

Abstract

A monolithic 5-GHz RF linear power amplifier for W-LAN IEEE802.11a applications was integrated using a very low cost 35-GHz-f_T bipolar process. The process adopts a selective germanium implant technique to optimize the base profile. The two-stage power amplifier exhibits a 8-dB power gain, a 27-dBm P_1dB and a 27% power added efficiency (PAE). Thanks to an optimized linearization technique the power amplifier is able to comply with the stringent error vector magnitude (EVM) requirement of the standard up to 23-dBm output power with an IEEE802.11a 54-Mbit/s input signal.

Keywords

Ge-Si alloys; IEEE standards; bipolar MMIC; circuit optimisation; elemental semiconductors; ion implantation; microwave power amplifiers; monolithic integrated circuits; wireless LAN; 35 GHz; 5 GHz; 54 Mbit/s; 8 dB; SiGe; W-LAN IEEE802.11a applications; base profile optimization; error vector magnitude requirement; f_T bipolar process; low cost power amplifier; monolithic RF linear power amplifier; optimized linearization technique; power added efficiency; selective germanium implant technique; two-stage power amplifier; Costs; Germanium silicon alloys; Implants; Local area networks; Power amplifiers; Power generation; Radio frequency; Radiofrequency amplifiers; Silicon germanium; Wireless LAN;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Integrated Circuit Symposium, 2004. IEEE

ISSN

1550-8781

Print_ISBN

0-7803-8616-7

Type

conf

DOI

10.1109/CSICS.2004.1392512

Filename

1392512