Bandgap engineering in deep submicron vertical pMOSFETs

Author

Ouyang, Q. ; Chen, X.D. ; Mudanai, S. ; Kencke, D.L. ; Tasch, A.F. ; Banerjee, S.K.

Author_Institution

Microelectron. Res. Center, Texas Univ., Austin, TX, USA

fYear

2000

fDate

19-21 June 2000

Firstpage

27

Lastpage

28

Abstract

Bandgap engineering in SiGe heterojunction bipolar transistors (HBT) and high-mobility SiGe channel pMOSFETs significantly enhances the device performance. This study, for the first time, further explores the application of Si-SiGe heterostructures in tailoring MOSFET channel potentials for improving the performance of deep submicron pMOSFETs, and provides guidance for experimental work.

Keywords

Ge-Si alloys; MOSFET; elemental semiconductors; energy gap; semiconductor device models; semiconductor materials; silicon; MOSFET channel potential; Si-SiGe; Si-SiGe heterostructures; SiGe heterojunction bipolar transistors; bandgap engineering; device performance; high-mobility SiGe channel pMOSFETs; pMOSFET performance; vertical pMOSFETs; Acceleration; Doping; Germanium silicon alloys; Heterojunction bipolar transistors; Kinetic energy; MOSFET circuits; Microelectronics; Photonic band gap; Silicon germanium; Thermionic emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 2000. Conference Digest. 58th DRC

Conference_Location

Denver, CO, USA

Print_ISBN

0-7803-6472-4

Type

conf

DOI

10.1109/DRC.2000.877074

Filename

877074