A high power Q-band MMIC power amplifier based on dual-recess 0.15 μm pHEMT

This paper demonstrates a three stage Q-band power amplifier based on TriQuint´s three metal interconnect (3MI) technology and 0.15μm dual-recess GaAs pHEMT process. The design, fabrication and experimental results of the MMIC amplifier are discussed. The amplifier employed a balanced configuration to achieve higher output power and good return loss. Each half consisted of three amplification stages with a 1:2:2 drive ratio and 12.8 mm of total FET periphery. Utilizing dual recess pHEMT technology the amplifier can be biased at Vds = 6V with 2A quiescent current; an equivalent of 150mA/mm current density. The amplifier can deliver 34 dBm of output power over a 41-46 GHz bandwidth with 15dB gain and typically -15dB return loss. The chip dimensions are 3.4 mm × 4.2 mm. Due to the high-integration level, this Q-band MMIC amplifier enables low cost millimeter-wave RF equipment for potential point to point radio communications and military applications.