A fully matched 8W X-band PHEMT MMIC high power amplifier

Author

Chu, C.K. ; Huang, H.K. ; Liu, H.Z. ; Chiu, R.J. ; Lin, C.H. ; Wang, C.C. ; Wang, Y.H. ; Hsu, C.C. ; Wu, W. ; Wu, C.L. ; Chang, C.S.

Author_Institution

Dept. of Electr. Eng., National Cheng-Kung Univ., Tainan, Taiwan

fYear

2004

fDate

24-27 Oct. 2004

Firstpage

137

Lastpage

140

Abstract

A X-band 8-watt AlGaAs/InGaAs/GaAs PHEMT MMIC power amplifier for the active phase radar applications is demonstrated. This amplifier is designed to fully match 50 ohm input and output impedance. With 8 volts and 850 mA DC bias condition, 17.5 dB small-signal gain, 39.3 dBm (8.5 watt) 2-dB gain compression power with 33.7% power-added efficiency and 40 dBm (10 watt) saturation power from 9.3 to 10.4 GHz can be achieved.

Keywords

III-V semiconductors; MMIC power amplifiers; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; power integrated circuits; radar applications; 10 W; 17.5 dB; 2 dB; 50 ohm; 8 V; 8 W; 850 mA; 9.3 to 10.4 GHz; AlGaAs; AlGaAs-InGaAs-GaAs PHEMT; InGaAs; MMIC high power amplifier; active phase radar applications; fully matched X-band PHEMT; Circuit simulation; Gain; Gallium arsenide; High power amplifiers; Impedance matching; MMICs; PHEMTs; Power amplifiers; Power generation; Radar applications;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Integrated Circuit Symposium, 2004. IEEE

ISSN

1550-8781

Print_ISBN

0-7803-8616-7

Type

conf

DOI

10.1109/CSICS.2004.1392514

Filename

1392514