• DocumentCode
    2538225
  • Title

    A 20 GHz low noise amplifier with active balun in a 0.25 um SiGe BICMOS technology

  • Author

    Welch, Brian ; Kornegay, Kevin ; Park, Hyun-Min ; Laskar, Joy

  • Author_Institution
    Cornell Univ., Ithaca, NY, USA
  • fYear
    2004
  • fDate
    24-27 Oct. 2004
  • Firstpage
    141
  • Lastpage
    144
  • Abstract
    A 20 GHz low noise amplifier (LNA) with an active balun fabricated in a 0.25um SiGe BICMOS (ft = 47 GHz) technology is presented The LNA achieves 7 dB of gain and a noise figure of 4.9 dB with all ports simultaneously matched with better than -16 dB of return loss. The amplifier is highly linear with an IP1dB of 0 dBm and IIP3 of 9 dBm, while consuming 14 mA of DC current from a 3.3v rail. To the authors knowledge, the LNA delivers the lowest reported noise figure and highest linearity for a silicon implementation of an (active balun /LNA) at 20 GHz.
  • Keywords
    BiCMOS integrated circuits; Ge-Si alloys; baluns; elemental semiconductors; microwave amplifiers; 0.25 micron; 14 mA; 20 GHz; 3.3 V; 4.9 dB; 47 GHz; 7 dB; SiGe; SiGe BICMOS technology; active balun; low noise amplifier; noise figure; Active noise reduction; BiCMOS integrated circuits; Gain; Germanium silicon alloys; Impedance matching; Linearity; Low-noise amplifiers; Noise figure; Rail to rail amplifiers; Silicon germanium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Compound Semiconductor Integrated Circuit Symposium, 2004. IEEE
  • ISSN
    1550-8781
  • Print_ISBN
    0-7803-8616-7
  • Type

    conf

  • DOI
    10.1109/CSICS.2004.1392515
  • Filename
    1392515
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2538225