Ultra wide band power amplifier using GaN on Si HEMT device

Author

Giofré, R. ; Colantonio, P. ; Giannini, F. ; Pantellini, A. ; Nanni, A. ; Lanzieri, C. ; Pistoia, D.

Author_Institution

E.E. Dept., Univ. of Roma Tor Vergata, Rome, Italy

Volume

2

fYear

2012

fDate

21-23 May 2012

Firstpage

722

Lastpage

725

Abstract

This contribution describes the design of an ultra wide band hybrid power amplifier for applications in the frequency range from 1 GHz to 6 GHz. The amplifier is designed with a GaN-on-Si HEMT device provided by SELEX-SI, in a single ended configuration and using the source/load-pull and Scattering parameters measured data. The amplifier has been designed using a CAD oriented broad band matching approach for both input and output networks. From 1 GHz to 6 GHz, the expected output power at 3dB of gain compression is around 41 dBm.

Keywords

CAD; III-V semiconductors; S-parameters; gallium compounds; high electron mobility transistors; microwave power amplifiers; silicon; wide band gap semiconductors; CAD oriented broad band matching; GaN; HEMT device; SELEX-SI; Si; frequency 1 GHz to 6 GHz; frequency range; gain 41 dB; input networks; output networks; scattering parameters; single ended configuration; ultra wide band hybrid power amplifier; Gallium nitride; HEMTs; Logic gates; Performance evaluation; Power amplifiers; Power generation; Silicon; GaN; PA; Power Amplifier; Ultra-wide band;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Radar and Wireless Communications (MIKON), 2012 19th International Conference on

Conference_Location

Warsaw

Print_ISBN

978-1-4577-1435-1

Type

conf

DOI

10.1109/MIKON.2012.6233568

Filename

6233568