A 90-GHz InP-HEMT lossy match amplifier with a 20-dB gain using a broadband matching technique

Author

Inoue, Y. ; Sato, M. ; Kawano, Y. ; Masuda, S. ; Ohki, T. ; Makiyarna, K. ; Takahashi, T. ; Shigematsu, Hisao ; Hirose, T.

Author_Institution

Fujitsu Labs. Ltd., Atsugi, Japan

fYear

2004

fDate

24-27 Oct. 2004

Firstpage

145

Lastpage

148

Abstract

We demonstrated a 90-GHz InP-HEMT lossy match amplifier (LMA) with a 20-dB gain for the first time. We obtained this performance with the power consumption of 220 mW, which is the smallest one ever reported for an over 80-GHz broadband amplifier. The amplifier acts as a C-R coupled amplifier in the low to medium frequency range and as an L-C match amplifier at the high frequencies. Therefore, this configuration provides both high gain and wide bandwidth. The key to achieve a 90-GHz bandwidth is broadband matching in the L-C match amplifier. In this paper, we propose a broadband matching technique with a low Q network and describe the design guideline for the excellent performance.

Keywords

III-V semiconductors; high electron mobility transistors; indium compounds; millimetre wave amplifiers; wideband amplifiers; 20 dB; 220 mW; 90 GHz; C-R coupled amplifier; InP; InP-HEMT lossy match amplifier; L-C match amplifier; broadband amplifier; broadband matching technique; low Q network; Bandwidth; Broadband amplifiers; Circuits; Energy consumption; Frequency; Optical amplifiers; Optical fiber communication; Optical fibers; Optical losses; Q factor;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Integrated Circuit Symposium, 2004. IEEE

ISSN

1550-8781

Print_ISBN

0-7803-8616-7

Type

conf

DOI

10.1109/CSICS.2004.1392516

Filename

1392516