900MHz/1800MHz GSM base station LNA with sub-1dB noise figure and +36dBm OIP3

Author

Leenaerts, Domine ; Bergervoet, Jos ; Lobeek, Jan-Willem ; Schmidt-Szalowski, Marek

Author_Institution

NXP Semicond., Eindhoven, Netherlands

fYear

2010

fDate

23-25 May 2010

Firstpage

513

Lastpage

516

Abstract

A sub-1dB NF fully integrated low noise amplifier in a 0.25μm SiGe:C BiCMOS technology targeting GSM base-station applications will be discussed. The two-stage LNA is housed in a HVSON10 package and mounted on a PCB. The LNA measures a NF of 0.75dB in the 900MHz band and 0.9dB in the 1800MHz band. The LNA is matched to 50Ω at the RF I/O pins of the IC and has integrated ESD protection on all IC pins. The LNA achieves an OIP3 of +36dBm, a 1-dB OCP of +19dBm while dissipating 190mW. The LNA performance is in line with the compound technology LNA counterparts.

Keywords

CMOS integrated circuits; cellular radio; low noise amplifiers; BiCMOS technology; GSM base station LNA; HVSON10 package; IC pins; PCB; frequency 1800 MHz; frequency 900 MHz; gain 0.75 dB; gain 0.9 dB; integrated ESD protection; low noise amplifier; noise figure; noise figure -1 dB; noise figure 36 dB; power 190 mW; resistance 50 ohm; Base stations; BiCMOS integrated circuits; GSM; Low-noise amplifiers; Noise figure; Noise measurement; Packaging; Pins; Radio frequency; Radiofrequency integrated circuits; BiCMOS; base-station; linearity; low noise amplifier;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits Symposium (RFIC), 2010 IEEE

Conference_Location

Anaheim, CA

ISSN

1529-2517

Print_ISBN

978-1-4244-6240-7

Type

conf

DOI

10.1109/RFIC.2010.5477321

Filename

5477321