DocumentCode
2538387
Title
Fundamental low phase noise InP-based DHBT VCOs with high output power operating up to 75 GHz
Author
Makon, Robert E. ; Schneider, K. ; Driad, R. ; Lang, M. ; Aidam, R. ; Quay, R. ; Weimann, G.
Author_Institution
Fraunhofer Inst. of Appl. Solid-State Phys., Freiburg, Germany
fYear
2004
fDate
24-27 Oct. 2004
Firstpage
159
Lastpage
162
Abstract
Fundamental low phase noise MMIC VCOs with high output power using InP/InGaAs double heterostructure bipolar transistors (DHBTs) are reported. A first VCO with output buffer has been designed for +70 GHz operation and exhibits oscillation frequencies ranging from 70.9 GHz to 75 GHz. At 74 GHz, the VCO features a minimum phase noise of -97 dBc/Hz at 1 MHz offset frequency. Within the tuning range, a single ended output power up to 8 dBm was measured, resulting in a total signal power of 11 dBm. The second VCO version without output buffer was targeted for the 44 GHz range. The achieved operation frequencies range from 43.4 GHz to 48 GHz, with up to 2 dBm single-ended output power. At 48 GHz, a minimum phase noise of -102 dBc/Hz at 1 MHz offset frequency is achieved.
Keywords
III-V semiconductors; MMIC oscillators; gallium arsenide; heterojunction bipolar transistors; indium compounds; phase noise; power integrated circuits; voltage-controlled oscillators; 1 MHz; 43.4 to 48 GHz; 70.9 to 75 GHz; DHBT; InP-InGaAs; MMIC VCO; double heterostructure bipolar transistors; high output power; low phase noise InP-based DHBT VCO; offset frequency; voltage controlled oscillator; Bipolar transistors; Frequency; Indium gallium arsenide; Indium phosphide; MMICs; Phase noise; Power generation; Power measurement; Tuning; Voltage-controlled oscillators;
fLanguage
English
Publisher
ieee
Conference_Titel
Compound Semiconductor Integrated Circuit Symposium, 2004. IEEE
ISSN
1550-8781
Print_ISBN
0-7803-8616-7
Type
conf
DOI
10.1109/CSICS.2004.1392521
Filename
1392521
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