Title :
Vacuum microelectronic electron emitter by InP double barrier diode toward RF application
Author :
Miyamoto, Y. ; Kurita, M. ; Furuya, K.
Author_Institution :
Dept. of Electr. & Electron. Eng., Tokyo Inst. of Technol., Japan
Abstract :
In this paper, the possibility of high-speed vacuum microelectronic devices is discussed. As a field emitter is limited by the charging time, an electron emitter using the internal field in a semiconductor has been proposed. With a view toward the development of a semiconductor electron emitter, preliminary results for an InP double barrier emitter are presented. The observed efficiency was about 10/sup -3/ without surface treatment.
Keywords :
III-V semiconductors; electron field emission; indium compounds; semiconductor device measurement; semiconductor diodes; vacuum microelectronics; InP; InP double barrier diode; InP double barrier emitter; RF application; efficiency; electron emitter; field emitter charging time; high-speed vacuum microelectronic devices; semiconductor electron emitter; semiconductor internal field; surface treatment; vacuum microelectronic electron emitter; Chromium; Electron guns; Gold; Indium phosphide; Microelectronics; Radio frequency; Semiconductor diodes; Surface treatment; Vacuum breakdown; Vacuum technology;
Conference_Titel :
Device Research Conference, 2000. Conference Digest. 58th DRC
Conference_Location :
Denver, CO, USA
Print_ISBN :
0-7803-6472-4
DOI :
10.1109/DRC.2000.877086
