Title :
120-GHz Tx/Rx chipset for 10-Gbit/s wireless applications using 0.1 μm-gate InP HEMTs
Author :
Kosugi, Toshihiko ; Tokumitsu, Masami ; Enoki, Takatomo ; Muraguchi, Masahiro ; Hirata, Akinhiko ; Nagatsuma, Tadao
Author_Institution :
NTT Photonics Labs., NTT Corp., Atsugi, Japan
Abstract :
This paper describes the development of a InP-HEMT MMIC chipset for 120-GHz wireless applications. The transmitter chip includes a frequency doubler for carriers, an ASK modulator, an RF band-pass filter, and a power amplifier. The receiver chip includes a low-noise amplifier and an ASK demodulator. A back-to-back test of the chipset has shown it to be fully functional at 10-Gbit/s data rate with BER=e-12 at -45.7-dBm input power of the receiver chip. To our knowledge, this is the first report of the development of highly integrated MMIC chipset operating at 120 GHz for wireless data communication.
Keywords :
MMIC; data communication; high electron mobility transistors; radio access networks; receivers; transmitters; 0.1 micron; 120 GHz; ASK demodulator; ASK modulator; InP HEMT; InP-HEMT MMIC chipset; RF band-pass filter; Tx/Rx chipset; frequency doubler; low-noise amplifier; power amplifier; receiver chip; transmitter chip; wireless applications; wireless data communication; Amplitude shift keying; Band pass filters; HEMTs; Indium phosphide; MMICs; MODFETs; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Transmitters;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium, 2004. IEEE
Print_ISBN :
0-7803-8616-7
DOI :
10.1109/CSICS.2004.1392524
