Title :
SiGe BiCMOS 65-GHz BPSK transmitter and 30 to 122 GHz LC-varactor VCOs with up to 21% tuning range
Author :
Lee, C. ; Yao, T. ; Mangan, A. ; Yau, K. ; Copeland, M.A. ; Voinigescu, S.P.
Author_Institution :
Edward S. Rogers, Sr. Dept. of Electr. & Comput. Eng., Toronto Univ., Ont., Canada
Abstract :
This work presents a systematic study of millimetre-wave, low-noise, widely-tuneable differential Colpitts VCOs. A design methodology was developed and validated experimentally over thirteen different varactor-tuned (VCO) and fixed-frequency L-C oscillators spanning the 30-GHz to 122-GHz frequency range. All circuits employ accumulation-mode n-MOS varactors, and multi-turn on-chip inductors. The 35-GHz and 60-GHz oscillators achieve phase noise of -112.7 dBc and -104 dBc/Hz, respectively at 1-MHz offset and deliver +4 dBm differential output power while a push-push implementation demonstrates 15-GHz (21%) tuning range from 63.5 GHz to 78.5 GHz. A directly-modulated, 65-GHz binary phase shift keying (BPSK) transmitter is also implemented.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; circuit tuning; integrated circuit design; integrated circuit noise; millimetre wave oscillators; phase noise; phase shift keying; radio transmitters; varactors; voltage-controlled oscillators; 15 GHz; 30 to 122 GHz; 35 GHz; 60 GHz; 63.5 to 78.5 GHz; 65 GHz; BPSK transmitter; Colpitts VCO; LC-varactor VCO; SiGe; SiGe BiCMOS; binary phase shift keying; millimetre-wave VCO; n-MOS varactors; on-chip inductors; phase noise; BiCMOS integrated circuits; Binary phase shift keying; Circuit optimization; Design methodology; Frequency; Germanium silicon alloys; Silicon germanium; Transmitters; Tuning; Voltage-controlled oscillators;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium, 2004. IEEE
Print_ISBN :
0-7803-8616-7
DOI :
10.1109/CSICS.2004.1392529
