• DocumentCode
    2538605
  • Title

    Impact of residue on Al/Si pads on gold bonding

  • Author

    Ahmad, Syed Sajid

  • Author_Institution
    Intel Corp., Chandler, AZ, USA
  • fYear
    1988
  • fDate
    9-11 May 1988
  • Firstpage
    534
  • Lastpage
    538
  • Abstract
    Gold wire bonds on Al/Si bonding pads were evaluated for bondability and bond reliability as a function of bonding pad over- and under-etch. Glass residues affect the bonds when the bonding pad is under-etched. When pads are over-etched, residues deposited form the plasma affect the bonds. Bondability to pads with various layers of residue was evaluated by visual inspection of the bonds, by pull-testing the bonds, and by measuring the electrical resistance of the bonds. Reliability was evaluated by monitoring electrical resistance of the bonds as a function of bake-time. It was discovered that bonds to under-etched pads do not stick and have low reliability. A small amount of over-etching was observed to improve the reliability of the bonds, but extended over-etching decreased the lifetime slightly
  • Keywords
    aluminium alloys; gold; integrated circuit technology; lead bonding; reliability; silicon alloys; AlSi-Au; bond reliability; bonding pads; electrical resistance; etching; glass residue; integrated circuit; lifetime; pull-testing; visual inspection; wire bonds; Bonding; Electric resistance; Electric variables measurement; Electrical resistance measurement; Glass; Gold; Inspection; Monitoring; Plasma measurements; Wire;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronics Components Conference, 1988., Proceedings of the 38th
  • Conference_Location
    Los Angeles, CA
  • Type

    conf

  • DOI
    10.1109/ECC.1988.12644
  • Filename
    12644