Title :
Very short channel metal-gate Schottky source/drain SOI-PMOSFETs and their short channel effect
Author :
Itoh, A. ; Saitoh, M. ; Asada, M.
Author_Institution :
Dept. of Electr. & Electron. Eng., Tokyo Inst. of Technol., Japan
Abstract :
Summary form only given. In this paper, very short channel metal-gate Schottky source/drain (S/D) PMOSFETs on SIMOX substrate are demonstrated, including a 25 nm-channel version, which is the shortest reported metal-gate SOI-PMOSFET to the authors´ knowledge, and the short channel effect of Schottky S/D MOSFETs is discussed experimentally and theoretically for the first time.
Keywords :
MOSFET; SIMOX; Schottky barriers; nanotechnology; semiconductor device measurement; semiconductor device metallisation; 25 nm; PMOSFETs; SIMOX substrate; Schottky S/D MOSFETs; Si-SiO/sub 2/; metal-gate SOI-PMOSFET; short channel effect; very short channel metal-gate Schottky S/D PMOSFETs; very short channel metal-gate Schottky source/drain SOI-PMOSFETs; Doping; Knowledge engineering; Lithography; MOSFETs; Oxidation; Schottky barriers; Silicidation; Temperature; Threshold voltage; Transconductance;
Conference_Titel :
Device Research Conference, 2000. Conference Digest. 58th DRC
Conference_Location :
Denver, CO, USA
Print_ISBN :
0-7803-6472-4
DOI :
10.1109/DRC.2000.877097
