DocumentCode :
2538685
Title :
Semiconductor plasma rod attenuation dependencies of modes on the concentration of light and heavy holes
Author :
Bubnelis, A. ; Nickelson, L. ; Martavicius, R.
Author_Institution :
Dept. of Electron. Syst., Vilnius Gediminas Tech. Univ., Vilnius, Lithuania
Volume :
2
fYear :
2012
fDate :
21-23 May 2012
Firstpage :
487
Lastpage :
490
Abstract :
In this work are examined the phase and attenuation constants of open magnetoactive p-Ge rod waveguides. Our algorithm allows analyzing the very high waveguide losses. Dispersion characteristics of p-Ge with two component hole charge carriers waveguide are calculated when the ratio of heavy holes´ concentration in the material is equal to 25%, 50% and 75% of the total free carrier concentration. Dispersion characteristics of the main helicon and eight higher helicon modes are presented here. There are the degeneration and the transformation of higher hybrid modes at some heavy holes´ concentrations. The waveguide broadbandwidth can be considerably extended due to the fact that the losses of the higher modes are considerably larger in comparisons to the main mode loss at the certain heavy holes´ concentration.
Keywords :
carrier density; dispersion (wave); semiconductor plasma; attenuation constants; dispersion characteristics; heavy holes; light holes; p-Ge rod waveguides; phase constants; semiconductor plasma rod attenuation dependencies; total free carrier concentration; very high waveguide losses; waveguide broadbandwidth; Decision support systems; carrier concentration; d. c. magnetic field; dispersion characteristics; gyrotropic waveguide; heavy and light holes; helicon waves; losses; p-Ge; phase constan; semiconductor plasma;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Radar and Wireless Communications (MIKON), 2012 19th International Conference on
Conference_Location :
Warsaw
Print_ISBN :
978-1-4577-1435-1
Type :
conf
DOI :
10.1109/MIKON.2012.6233592
Filename :
6233592
Link To Document :
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