High performance AlGaN/AlN/GaN HEMTs grown on 100-mm-diameter epitaxial AlN/sapphire templates by MOVPE

Author

Miyoshi, Masaru ; Imanish, A. ; Ishikawa, H. ; Egawa, T. ; Asai, K. ; Mouri, M. ; Shibata, T. ; Tanaka, M. ; Oda, O.

Author_Institution

Res. Center for Nano-Device & Syst., Nagoya Inst. of Technol., Japan

fYear

2004

fDate

24-27 Oct. 2004

Firstpage

193

Lastpage

196

Abstract

A_0.26Ga_0.74N/AlN/GaN heterostructures with 1-nm-thick AlN interfacial layers were grown on 100-mm-diameter epitaxial AlN/sapphire templates and sapphire substrates by metalorganic vapor phase epitaxy (MOVPE). Very high Hall mobilities of approximately 2100 cm²/Vs at room temperature and approximately 25000 cm²/Vs at 15 K with a 2DEG density of approximately 1× 10¹³/cm² were uniformly obtained for AlGaN/ AlN/GaN heterostructures on 100-mm-diameter epitaxial AIN/ sapphire templates. High-electron-mobility transistors (HEMTs) were successfully fabricated on the AlGaN/AlN/GaN film on the epitaxial AIN/sapphire template. The fabricated devices exhibited good pinch-off characteristics and a very high intrinsic transconductance of 496 mS/mm.

Keywords

Hall mobility; III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; sapphire; semiconductor epitaxial layers; vapour phase epitaxial growth; wide band gap semiconductors; 1 nm; 100 mm; 15 K; Al₂O₃; AlGaN-AlN-GaN; AlN interfacial layers; Hall mobilities; MOVPE; epitaxial AIN/sapphire template; film epitaxy; high electron mobility transistors; intrinsic transconductance; metalorganic vapor phase epitaxy; sapphire substrates; sapphire template; Aluminum gallium nitride; Epitaxial growth; Epitaxial layers; Gallium nitride; HEMTs; Hall effect; MODFETs; Substrates; Temperature; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Integrated Circuit Symposium, 2004. IEEE

ISSN

1550-8781

Print_ISBN

0-7803-8616-7

Type

conf

DOI

10.1109/CSICS.2004.1392534

Filename

1392534