A high reliability GaN HEMT with SiN passivation by Cat-CVD

Author

Kunii, Tetsuo ; Totsuka, Masahiro ; Kamo, Yoshitaka ; Yamamoto, Yoshitsugu ; Takeuchi, Hideo ; Shimada, Yoshiharu ; Shiga, Toshihiko ; Minami, Hiroyuki ; Kitano, Toshiaki ; Miyakuni, Shinichi ; Nakatsuka, Shigenori ; Inoue, Akira ; Oku, Tomoki ; Nanjo, Ta

Author_Institution

High Frequency & Opt. Device Works, Mitsubishi Electr. Corp., Hyogo, Japan

fYear

2004

fDate

24-27 Oct. 2004

Firstpage

197

Lastpage

200

Abstract

This is the first report of catalytic vapor deposition (Cat-CVD) passivated AlGaN/GaN HEMT. We have found out that the Cat-CVD passivation film with NH3 treatment greatly enhances the reliability of the AlGaN/GaN HEMT. It is rationalized, through the low frequency capacitance-voltage measurement, that the NH3 treatment in the Cat-CVD reactor before the SiN film deposition minimizes the damage at the SiN/AlGaN interface, leading to reducing the surface trap density. The AlGaN/GaN HEMT passivated by the Cat-CVD SiN film suppresses the degradation of an output power to less than 0.4 dB under the RF operation of Vd = 30 V, f = 5 GHz after 200 h.

Keywords

III-V semiconductors; aluminium compounds; chemical vapour deposition; gallium compounds; high electron mobility transistors; passivation; reliability; silicon compounds; surface treatment; wide band gap semiconductors; 200 h; 30 V; 5 GHz; AlGaN/GaN HEMT; NH3 treatment; SiN; SiN-AlGaN-GaN-AlN; catalytic vapor deposition; film deposition; frequency capacitance-voltage measurement; reliability; surface trap density; Aluminum gallium nitride; Capacitance measurement; Capacitance-voltage characteristics; Chemical vapor deposition; Density measurement; Frequency; Gallium nitride; HEMTs; Passivation; Silicon compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Integrated Circuit Symposium, 2004. IEEE

ISSN

1550-8781

Print_ISBN

0-7803-8616-7

Type

conf

DOI

10.1109/CSICS.2004.1392535

Filename

1392535