Title :
Temperature-dependence of a GaN-based HEMT monolithic X- band low noise amplifier
Author :
Schwindt, R.S. ; Kumar, V. ; Aktas, O. ; Lee, J.W. ; Adesida, I.
Author_Institution :
Dept. of Eng., Union Univ., Jackson, TN, USA
Abstract :
The temperature-dependent performance of a fully monolithic AlGaN/GaN HEMT-based X-band low noise amplifier is reported. The circuit demonstrated a noise figure of 3.5 dB, gain of 7.5 dB, input return loss of -7.5 dB, and output return loss of -15 dB at 8.5 GHz at room temperature. The noise figure at 9.5 GHz increased from 2.5 dB at -43°C to 5.0 dB at 150degC.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; aluminium compounds; gallium compounds; silicon compounds; wide band gap semiconductors; 15 dB; 150 C; 2.5 dB; 3.5 dB; 43 C; 5.0 dB; 7.5 dB; 8.5 GHz; 9.5 GHz; AlGaN-GaN; AlGaN/GaN HEMT; GaN; MMIC; SiC; gallium nitride; monolithic X- band low noise amplifier; wide bandgap; Circuit noise; Fabrication; Gallium nitride; Gold; HEMTs; High power amplifiers; Low-noise amplifiers; MMICs; Metal-insulator structures; Working environment noise;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium, 2004. IEEE
Print_ISBN :
0-7803-8616-7
DOI :
10.1109/CSICS.2004.1392536
