Characterization and modeling of low-cost, high-performance GaN-Si technology

A complete characterization of HEMT devices fabricated on a GaN-on-Silicon process developed by SELEX Sistemi Integrati is presented, together with the characterization and modeling of passive elements fabricated on the same substrate. Experimental results demonstrate that the power management capability of 1-μm GaN-Si HEMTs is suitable for most high power applications; moreover, the noise performance of such devices are in line with those of 0.5-μm GaN-SiC HEMTs fabricated by the same foundry. Finally, from the passive elements characterization the suitable operating bandwidth for the MMICs based on this technology can be assessed at least up to C-band.