Title :
Transistor and circuit design for 100-200 GHz ICs
Author :
Rodwell, M. ; Griffith, Zach ; Scott, D. ; Wei, Y. ; Dong, Y. ; Paidi, V. ; Dahlström, M. ; Parthasarathy, N. ; Kadow, C. ; Urteaga, M. ; Pierson, R. ; Rowell, P. ; Lee, S. ; Nguyen, Ngac Ky ; Nguyen, N. ; Brar, B.
Author_Institution :
Dept. of ECE, California Univ., Santa Barbara, CA, USA
Abstract :
Compared to SiGe, InP HBTs offer superior electron transport but inferior scaling and parasitic reduction. Figures of merit for mixed-signal ICs are developed and HBT scaling laws for improved circuit speed are introduced. Device and circuit results are summarized, including 390 GHz fτ / 500 GHz fmax DHBTs, 174 GHz amplifiers, and 150 GHz static frequency dividers. To compete with 100 nm SiGe processes, InP must be similarly scaled, and high process yields are imperative. We describe several process modules in development, including emitter regrowth, emitter-base dielectric sidewall processes, and a collector pedestal implant process.
Keywords :
bipolar transistor circuits; heterojunction bipolar transistors; indium compounds; integrated circuit design; mixed analogue-digital integrated circuits; silicon compounds; 100 nm; 100 to 200 GHz; 150 GHz; 174 GHz; 390 GHz; HBT scaling laws; InP; InP HBT; SiGe; circuit speed DHBT; dielectric sidewall processes; electron transport; emitter regrowth; inferior scaling; integrated circuit design; mixed-signal IC; parasitic reduction; pedestal implant process; process yields; static frequency dividers; transistor; Circuit synthesis; Dielectrics; Double heterojunction bipolar transistors; Electrons; Frequency conversion; Germanium silicon alloys; Heterojunction bipolar transistors; Implants; Indium phosphide; Silicon germanium;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium, 2004. IEEE
Print_ISBN :
0-7803-8616-7
DOI :
10.1109/CSICS.2004.1392539
