• DocumentCode
    2538836
  • Title

    What can we learn from organic single crystal devices?

  • Author

    Schon, J.H. ; Kloc, C. ; Batlogg, B.

  • Author_Institution
    AT&T Bell Labs., Murray Hill, NJ, USA
  • fYear
    2000
  • fDate
    19-21 June 2000
  • Firstpage
    105
  • Lastpage
    106
  • Abstract
    Summary form only given. We have shown ambipolar charge transport in high-purity single crystal devices of pentacene (Schon et al, 2000), tetracene, C/sub 60/, /spl alpha/-sexithiophene, and perylene. Mobilities as high as 5.5 cm/sup 2//Vs are achieved in perylene. Inverter circuits and ring oscillators have been prepared using ambipolar FETs. Oscillation frequencies >75 kHz are obtained. Initial results on ambipolar pentacene thin film FETs are presented. The field-effect can be used to inject carriers of both signs into a device. Using two FETs with opposite gate bias, electrons and holes can be injected to generate excitons. We fabricated light-emitting devices and smart pixels on single crystals. High mobilities at low temperatures and balanced injection were found to improve the emission properties of these devices. We also produced photovoltaic devices based on single crystals which have advantages with respect to charge transport properties (Schon et al, 2000). Efficiencies >3% (AM1.5 solar illumination) were achieved.
  • Keywords
    charge injection; electron mobility; excitons; field effect integrated circuits; field effect transistors; hole mobility; light emitting diodes; molecular electronics; organic semiconductors; smart pixels; solar cells; thin film transistors; 3 percent; 75 kHz; C/sub 60/; C/sub 60/ devices; FET performance limits; FETs; LEDs; alpha-sexithiophene devices; ambipolar FETs; ambipolar charge transport; ambipolar pentacene thin film FETs; balanced injection; carrier mobility; charge transport physics; charge transport properties; defect density; electron injection; emission properties; excitons; field-effect carrier injection; flexibility; gate bias; hole injection; intrinsic material capabilities; inverter circuits; large-area processing; light-emitting devices; oligothiophenes; optoelectronic devices; organic semiconductor materials; organic single crystal devices; oscillation frequency; pentacene devices; perylene devices; photovoltaic devices; polyacenes; ring oscillators; single crystal devices; single crystals; smart pixels; solar cells; solar illumination; tetracene devices; thin film devices; Charge carrier processes; Crystals; Excitons; FETs; Frequency; Inverters; Pentacene; Ring oscillators; Smart pixels; Thin film circuits;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference, 2000. Conference Digest. 58th DRC
  • Conference_Location
    Denver, CO, USA
  • Print_ISBN
    0-7803-6472-4
  • Type

    conf

  • DOI
    10.1109/DRC.2000.877108
  • Filename
    877108