• DocumentCode
    2538838
  • Title

    Fabrication of planar GaN-based micro-pixel light emitting diode arrays

  • Author

    Massoubre, D. ; McKendry, J. ; Guilhabert, B. ; Gong, Z. ; Watson, I.M. ; Gu, E. ; Dawson, M.D.

  • Author_Institution
    Inst. of Photonics, Univ. of Strathclyde, Glasgow, UK
  • fYear
    2009
  • fDate
    4-8 Oct. 2009
  • Firstpage
    84
  • Lastpage
    85
  • Abstract
    We report a new processing approach which enables the fabrication of planar GaN-based micro-pixel LED arrays. This process is based on selective passivation of the p-doped GaN surface by a CHF3 plasma treatment.
  • Keywords
    III-V semiconductors; carbon compounds; gallium compounds; hydrogen compounds; light emitting diodes; optical fabrication; wide band gap semiconductors; CHF3; micro-pixel light emitting diode arrays fabrication; plasma treatment; Conductivity; Fabrication; Gallium nitride; Light emitting diodes; Optical arrays; Passivation; Plasma applications; Plasma devices; Plasma properties; Surface treatment;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    LEOS Annual Meeting Conference Proceedings, 2009. LEOS '09. IEEE
  • Conference_Location
    Belek-Antalya
  • ISSN
    1092-8081
  • Print_ISBN
    978-1-4244-3680-4
  • Electronic_ISBN
    1092-8081
  • Type

    conf

  • DOI
    10.1109/LEOS.2009.5343456
  • Filename
    5343456