Title :
Design and InP HEMT Technology for ultra-high speed digital ICs with beyond 80-Gbit/s operation
Author :
Suzuki, T. ; Kawano, Y. ; Nakasha, Y. ; Takahashi, T. ; Makiyama, K. ; Hirose, T. ; Takikawa, M.
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
Abstract :
There is great interest in increasing the operating speed of digital circuits. Using 0.10-μm gate-length InP HEMT technology, to date we have developed a 144-Gbit/s multiplexer (MUX), a 80-Gbit/s demultiplexer (DEMUX), a 80-Gbit/s D-type flip-flop (D-FF), and a 90-GHz T-type flip-flop (T-FF). Key aspects of the fabrication, circuit design, and measurement are described in this paper.
Keywords :
demultiplexing equipment; digital integrated circuits; flip-flops; high electron mobility transistors; high-speed integrated circuits; indium compounds; integrated circuit design; multiplexing equipment; 0.10 micron; 90 GHz; D-type flip-flop; InP; InP HEMT technology; T-type flip-flop; demultiplexer; multiplexer; ultra-high speed digital IC; Circuit synthesis; Cutoff frequency; Digital circuits; Fabrication; Flip-flops; HEMTs; Indium phosphide; Integrated circuit interconnections; Integrated circuit technology; Parasitic capacitance;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium, 2004. IEEE
Print_ISBN :
0-7803-8616-7
DOI :
10.1109/CSICS.2004.1392540
