Title :
A 132Gb/s 4:1 multiplexer in 0.13μm SiGe-bipolar technology
Author :
Meghelli, Mounir
Author_Institution :
IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
A -3.3V half-rate clock 4:1 multiplexer implemented in a 210GHz fT 0.13μm SiGe-bipolar technology and operating up to 132Gb/s is reported. Among many design challenges, the control of on-chip clock distribution was critical to achieve such a high data rate. At 100Gb/s, the chip operates reliably down to -3.0V supply voltage and up to 100°C chip temperature. The circuit consumes 1.45W from a -3.3V supply voltage and exhibits less than 340fs rms jitter on the output data.
Keywords :
III-V semiconductors; bipolar integrated circuits; clocks; integrated circuit design; jitter; multiplexing equipment; silicon compounds; -3.3 V; 0.13 micron; 1.45 W; 100 C; 210 GHz; 3.0 V; 4:1 multiplexer; SiGe; SiGe-bipolar technology; jitter; on-chip clock distribution; Bandwidth; Circuits; Clocks; Energy consumption; Frequency; Latches; Multiplexing; Power transmission lines; Resistors; Voltage;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium, 2004. IEEE
Print_ISBN :
0-7803-8616-7
DOI :
10.1109/CSICS.2004.1392541
