Title :
Mid-infrared lead-chlacogenide VECSELs emitting up to above RT at 4–6 um wavelength
Author :
Zogg, H. ; Rahim, M. ; Fill, M. ; Felder, F. ; Khiar, A. ; Chappuis, D.
Author_Institution :
Thin Film Phys. Group, ETH Zurich, Zurich, Switzerland
Abstract :
The authors describe the first mid-infrared VECSELs (vertical external cavity surface emitting laser) operating up to above room temperature. They employ a resonant design with a one wavelength optical thickness of the active layer (PbSe or PbTe). The structures are grown non-lattice matched on BaF2 or Si substrate by solid state molecular beam epitaxy (MBE).
Keywords :
IV-VI semiconductors; lead compounds; surface emitting lasers; BaF2; MBE; PbSe; PbTe; Si; midinfrared lead-chlacogenide VECSEL; nonlattice matching; one wavelength optical thickness; resonant design; solid state molecular beam epitaxy; vertical external cavity surface emitting laser; Molecular beam epitaxial growth; Optical design; Optical surface waves; Resonance; Solid state circuits; Stimulated emission; Substrates; Surface emitting lasers; Temperature; Vertical cavity surface emitting lasers;
Conference_Titel :
LEOS Annual Meeting Conference Proceedings, 2009. LEOS '09. IEEE
Conference_Location :
Belek-Antalya
Print_ISBN :
978-1-4244-3680-4
Electronic_ISBN :
1092-8081
DOI :
10.1109/LEOS.2009.5343459
