• DocumentCode
    2538890
  • Title

    Mid-infrared lead-chlacogenide VECSELs emitting up to above RT at 4–6 um wavelength

  • Author

    Zogg, H. ; Rahim, M. ; Fill, M. ; Felder, F. ; Khiar, A. ; Chappuis, D.

  • Author_Institution
    Thin Film Phys. Group, ETH Zurich, Zurich, Switzerland
  • fYear
    2009
  • fDate
    4-8 Oct. 2009
  • Firstpage
    82
  • Lastpage
    83
  • Abstract
    The authors describe the first mid-infrared VECSELs (vertical external cavity surface emitting laser) operating up to above room temperature. They employ a resonant design with a one wavelength optical thickness of the active layer (PbSe or PbTe). The structures are grown non-lattice matched on BaF2 or Si substrate by solid state molecular beam epitaxy (MBE).
  • Keywords
    IV-VI semiconductors; lead compounds; surface emitting lasers; BaF2; MBE; PbSe; PbTe; Si; midinfrared lead-chlacogenide VECSEL; nonlattice matching; one wavelength optical thickness; resonant design; solid state molecular beam epitaxy; vertical external cavity surface emitting laser; Molecular beam epitaxial growth; Optical design; Optical surface waves; Resonance; Solid state circuits; Stimulated emission; Substrates; Surface emitting lasers; Temperature; Vertical cavity surface emitting lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    LEOS Annual Meeting Conference Proceedings, 2009. LEOS '09. IEEE
  • Conference_Location
    Belek-Antalya
  • ISSN
    1092-8081
  • Print_ISBN
    978-1-4244-3680-4
  • Electronic_ISBN
    1092-8081
  • Type

    conf

  • DOI
    10.1109/LEOS.2009.5343459
  • Filename
    5343459
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2538890