DocumentCode :
2538940
Title :
Improvement of PLED lifetime using inorganic Mg-Zn-F thin film passivation
Author :
Kang, Byoung-Ho ; Kim, Do-Eok ; Seo, Jun-Seon ; Kim, Jae-Hyun ; Lee, Jung-Hee ; Kwon, Dae-Hyuk ; Lee, Hyeong-Rag ; Kang, Shin-Won
Author_Institution :
Sch. of Electr. Eng. & Comput. Sci., Kyungpook Nat. Univ., Daegu, South Korea
fYear :
2009
fDate :
4-8 Oct. 2009
Firstpage :
73
Lastpage :
74
Abstract :
We manufactured a novel gas permeation thin film passivation by using inorganic Mg-Zn-F. The film was formed about 200 nm and WVTR was reached 10-3g/m2-day. Applied to PLED device, lifetime was increased 25 times.
Keywords :
magnesium compounds; organic light emitting diodes; passivation; semiconductor thin films; zinc compounds; Mg-Zn-F; WVTR; gas permeation thin film passivation; lifetime improvement; polymer light emitting diodes; water vapor transmission rate; Displays; Magnetic analysis; Optical films; Passivation; Sealing materials; Sputtering; Thin film sensors; Transistors; Wafer bonding; Zinc;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
LEOS Annual Meeting Conference Proceedings, 2009. LEOS '09. IEEE
Conference_Location :
Belek-Antalya
ISSN :
1092-8081
Print_ISBN :
978-1-4244-3680-4
Electronic_ISBN :
1092-8081
Type :
conf
DOI :
10.1109/LEOS.2009.5343462
Filename :
5343462
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2538940
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