Application of BSIMSOI MOSFET model to SOS technology

The BSIMSOI model largely dominates the modeling of silicon-on-insulator (SOI) MOSFET technologies. Silicon-on-sapphire (SOS) technology has many of the advantages of SOI for RF and low-power applications, but with enhanced electrical isolation and heat dissipation, among others. We show that BSIMSOI can reasonably describe state-of-the-art SOS devices as well, including partial and full depletion, as long as differences between SOS and SOI technologies are accounted for in the parameter extraction methodology. For RF switch applications, RON and COFF are adequately represented. Also, a spot check at low currents shows that a modeled RF figure of merit, FT, is not unreasonable.