Highly linear SOI single-pole, 4-throw switch with an integrated dual-band LNA and bypass attenuators

An innovative Silicon-On-Insulator (SOI) SP4T T/R switch is presented. The SP4T switch consists of 2 receive paths with an integrated dual-band LNA and bypass attenuators along with 2 high linearity matched transmit paths. Tx paths feature 0.1 dB compression to 34 dBm input power and 0.5-0.8 dB insertion loss from 1 to 6 GHz with > 20 dB return loss and > 25 dB isolation. Receive paths feature 16 dB gain with 2.3 dB NF for 2.4-2.5 GHz and 14 dB gain with 2.4-2.6 dB NF for 4.9-5.9 GHz. The band selectivity exceeds 40 dB. Cascading with a dual-band WLAN PA, a complex dual-band WLAN/MIMO front-end module (FEM) can be easily constructed with low assembly complexity and post PA losses resulting in dual-band transmit linearity >18 dBm with EVM <; 3% and <; -50 dBm/MHz harmonic emissions within a 4 × 5 mm QFN package.