Highly efficient high power InP HEMT amplifiers for high frequency applications

Summary form only given. InAlAs-InGaAs HEMTs grown on InP substrates promise excellent gain and noise performance for amplifier applications well into the deep sub-millimeter wave region. Low noise amplifiers (LNAs) with 6 dB noise figure at 170 GHz (Lai et al, 1998) and 15 dB gain at 215 GHz (Weinreb et al, 1999) have been realized using TRW´s sub-0.1 /spl mu/m InP HEMT MMIC technology. On the other hand, there has been controversy over the suitability of InAlAs-InGaAs HEMTs for high power amplifier (PA) applications due to the low impact ionization onset field in the InGaAs channel. Our systematic approach in enhancing InP HEMT power performance has enabled the demonstration of world-record solid-state power amplifiers at V-and W-bands (Chen et al, 1998 and 1999). The results not only set a new milestone for InP HEMT technology, but also changed perceptions on the suitability of InAlAs-InGaAs HEMTs for high power applications.