Title :
MOCVD-grown 175 GHz InP-GaAs/sub x/Sb/sub 1-x/-InP DHBTs with high current gains using strained and heavily C-doped base layers
Author :
Dvorak, M.W. ; Matine, N. ; Watkins, S.P. ; Bolognesi, C.R.
Author_Institution :
Dept. of Phys., Simon Fraser Univ., Burnaby, BC, Canada
Abstract :
Summary form only given. In this paper, we report high current gain InP-GaAsSb-InP DHBTs implemented with a 200 /spl Aring/ thick strained GaAs/sub 0.6/Sb/sub 0.4/ highly-doped base layer (C: 8/spl times/10/sup 19/ cm/sup -3/). The devices exhibit peak cut-off frequencies f/sub T/= 175 GHz and f/sub max/=106 GHz with a BV/sub CEO/=6 V and a DC current gain /spl beta/=200-300 which can be traded off for higher f/sub max/ values. The devices behave extremely well even at low supply voltages: f/sub T/ remains above 150 GHz (125 GHz) for V/sub CE+/=0.75 V (0.55 V). This work is the first demonstration of a sub-picosecond transit time for an HBT with a base material other than GaInAs or GaAs, and we attribute the tenfold increase in /spl beta/ with respect to our previous work (Bolognesi et al, 1999) on the use of a strained As-rich base layer.
Keywords :
III-V semiconductors; MOCVD; electron mobility; gallium arsenide; heterojunction bipolar transistors; hole mobility; indium compounds; interface states; microwave bipolar transistors; millimetre wave bipolar transistors; semiconductor device measurement; semiconductor growth; vapour phase epitaxial growth; 0.55 V; 0.75 V; 100 GHz; 106 GHz; 125 GHz; 150 GHz; 175 GHz; 200 angstrom; 6 V; DC current gain; GaAs/sub 0.6/Sb/sub 0.4/:C; GaAsSb base layer; GaAsSb-InP interfaces; GaInAs-based DHBTs; InP conduction band; InP-GaAsSb-InP; InP-GaAsSb-InP DHBTs; InP-GaAsSb-InP NpN DHBTs; InP-GaAsSb-InP NpN double heterojunction bipolar transistors; MOCVD-grown InP-GaAs/sub x/Sb/sub 1-x/-InP DHBTs; NpN DHBTs; abrupt base-collector junction; base sheet resistance; base transit times; current gain; direct electron injection; electron transport properties; hole transport properties; maximum frequency performance; optimal high-current operation configuration; p/sup +/ GaAsSb base region; peak maximum frequencies; staggered line-up; strained As-rich base layer; strained GaAs/sub 0.6/Sb/sub 0.4/:C highly-doped base layer; strained heavily C-doped base layers; supply voltage; Cutoff frequency; Double heterojunction bipolar transistors; Electrons; Gallium arsenide; Indium phosphide; Solid state circuits; Voltage;
Conference_Titel :
Device Research Conference, 2000. Conference Digest. 58th DRC
Conference_Location :
Denver, CO, USA
Print_ISBN :
0-7803-6472-4
DOI :
10.1109/DRC.2000.877124
