Transmitter chipset for 24/77-GHz automotive radar sensors

Author

Giammello, Vittorio ; Ragonese, Egidio ; Palmisano, Giuseppe

Author_Institution

Fac. di Ing., Univ. di Catania, Catania, Italy

fYear

2010

fDate

23-25 May 2010

Firstpage

75

Lastpage

78

Abstract

This paper presents a SiGe BiCMOS transmitter chipset for 24/77-GHz automotive radar sensors. The chipset adopts a dual-band architecture consisting of a 24-GHz section for ultra-wideband short-range radar operation, which is able to drive the 77-GHz long-range radar transmitter front-end. The proposed solution allows using a single 24-GHz frequency synthesizer to implement both operation modes. The 77-GHz transmitter demonstrates an output power of 12 dBm, a power gain of 20 dB and an output-referred 1-dB compression point of 11 dBm, while drawing 155 mA from a 2.5-V supply voltage.

Keywords

BiCMOS integrated circuits; frequency synthesizers; road vehicle radar; ultra wideband radar; SiGe BiCMOS transmitter chipset; automotive radar sensor; current 155 mA; dual-band architecture; frequency 24 GHz; frequency 77 GHz; frequency synthesizer; gain 20 dB; ultra-wideband short-range radar; voltage 2.5 V; Automotive engineering; BiCMOS integrated circuits; Dual band; Frequency synthesizers; Germanium silicon alloys; Power generation; Radar; Silicon germanium; Transmitters; Ultra wideband technology; BiCMOS integrated circuits; millimeter wave transmitters; mixers; phase-locked loops; power amplifiers; transformers;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits Symposium (RFIC), 2010 IEEE

Conference_Location

Anaheim, CA

ISSN

1529-2517

Print_ISBN

978-1-4244-6240-7

Type

conf

DOI

10.1109/RFIC.2010.5477365

Filename

5477365