A switching-mode amplifier for class-S transmitters for clock frequencies up to 7.5 GHz in 0.25µm SiGe-BiCMOS

Author

Heck, Stefan ; Schmidt, Martin ; Bräckle, Alexander ; Schuller, Frieder ; Grözing, Markus ; Berroth, Manfred ; Gustat, Hans ; Scheytt, Christoph

Author_Institution

Inst. of Electr. & Opt. Commun. Eng., Univ. of Stuttgart, Stuttgart, Germany

fYear

2010

fDate

23-25 May 2010

Firstpage

565

Lastpage

568

Abstract

This paper presents the first voltage mode H-bridge switching amplifier in a fast complementary SiGe-technology for frequencies in the GHz range. The amplifier is suited as a driver for a high power GaN amplifier in class-S transmitters. It can be operated with pseudo-random digital pulse trains up to 7.5 Gbit/s. The measured broadband output power for a rectangular drive signal with a 50% duty cycle and a frequency of 2 GHz is about 148 mW. The efficiency of the switching stage including its two-stage inverter driver is about 43%. Including the input current-mode-logic (CML) stage, the PAE is about 30%.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; amplifiers; invertors; SiGe-BiCMOS; class-S transmitter; clock frequencies; current-mode-logic; frequency 2 GHz; frequency 7.5 GHz; high power GaN amplifier; pseudo-random digital pulse train; size 0.25 micron; two-stage inverter driver; voltage mode H-bridge switching amplifier; Broadband amplifiers; Clocks; Driver circuits; Frequency; Gallium nitride; High power amplifiers; Power measurement; Pulse amplifiers; Transmitters; Voltage; Bandpass delta-sigma modulation; bipolar integrated circuit; class-S; switching amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits Symposium (RFIC), 2010 IEEE

Conference_Location

Anaheim, CA

ISSN

1529-2517

Print_ISBN

978-1-4244-6240-7

Type

conf

DOI

10.1109/RFIC.2010.5477368

Filename

5477368